The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Sep. 29, 2017
Applicant:
Intel Ip Corporation, Santa Clara, CA (US);
Inventors:
Assignee:
Intel IP Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 27/02 (2006.01); H01L 23/498 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 23/373 (2006.01); H01L 25/065 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/4803 (2013.01); H01L 21/7624 (2013.01); H01L 23/4985 (2013.01); H01L 27/0207 (2013.01); H01L 27/1203 (2013.01); H01L 21/84 (2013.01); H01L 23/3736 (2013.01); H01L 25/0652 (2013.01);
Abstract
A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.