The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Feb. 09, 2018
Applicant:
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Didier Dutartre, Meylan, FR;
Herve Jaouen, Saint Nazaire les Eymes, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7624 (2013.01); H01L 21/0245 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01);
Abstract
A semiconductor wafer suitable for fabricating an SOI substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.