The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Jan. 24, 2018
Applicant:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Inventors:

Tsuyoshi Nakamura, Incheon, KR;

Kazuishi Tanno, Incheon, KR;

JunYeob Lee, Incheon, KR;

Assignee:

TOKYO OHKA KOGYO CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); C08F 224/00 (2006.01); C08F 232/02 (2006.01); C08F 232/04 (2006.01); C08F 232/08 (2006.01); G03F 7/039 (2006.01); G03F 7/038 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); C08F 220/16 (2006.01); C08F 220/28 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0397 (2013.01); C08F 220/16 (2013.01); C08F 224/00 (2013.01); C08F 232/02 (2013.01); C08F 232/04 (2013.01); C08F 232/08 (2013.01); G03F 7/0045 (2013.01); G03F 7/038 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); C08F 220/28 (2013.01); C08F 2220/282 (2013.01); C08F 2220/283 (2013.01); C08F 2800/10 (2013.01);
Abstract

A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.


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