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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10529915 B1

PDFFull Text
Date of Patent:
Jan. 07, 2020

Filed:

Aug. 08, 2018

Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer

Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventor:

Satoru Araki, San Jose, CA (US);

Assignee:

Spin Memory, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:

Nicholas J Tobergte

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); G11C 5/02 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 5/02 (2013.01); G11C 7/06 (2013.01); G11C 11/161 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/226 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11C 2211/5615 (2013.01);
Abstract

A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.

Find Patent Forward Citations

Araki, Satoru. (2020). Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer (U.S. Patent No. 10529915). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10529915

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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