The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Mar. 21, 2016
Applicant:

Specmat, Inc., North Olmstead, OH (US);

Inventors:

Horia M. Faur, Medina, OH (US);

Maria Faur, North Olmsted, OH (US);

Assignee:

SPECMAT, Inc., North Olmsted, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/028 (2013.01); H01L 31/02167 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); H01L 31/206 (2013.01); H01L 21/0203 (2013.01); H01L 21/30604 (2013.01); Y02E 10/50 (2013.01);
Abstract

A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a stain etching process, which retrofits existing tools for junction isolation and Phosphorus Silicon Glass (PSG) etch in solar cell manufacturing. The retrofitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etch, antireflection coating, and passivation of the front surface of the solar cell.


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