The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
May. 30, 2012
Elizabeth Kho Ching Tee, Sarawak, MY;
Alexander Dietrich Holke, Sarawak, MY;
Steven John Pilkington, Sarawak, MY;
Deb Kumar Pal, Sarawak, MY;
Elizabeth Kho Ching Tee, Sarawak, MY;
Alexander Dietrich Holke, Sarawak, MY;
Steven John Pilkington, Sarawak, MY;
Deb Kumar Pal, Sarawak, MY;
X-FAB SEMICONDUCTOR FOUNDRIES GMBH, Erfurt, DE;
Abstract
An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.