The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Dec. 28, 2018
Infineon Technologies Ag, Neubiberg, DE;
Matthias Kuenle, Villach, AT;
Daniel Schloegl, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Christoph Weiss, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region having a maximum dopant concentration of at least 0.5*10cmfor at least 70% of a total extension of the doped transition region in an extension direction and a maximal dopant concentration gradient of at most 3*10cm, wherein a lower subregion of the doped transition region is in contact with the contact region and has a maximum dopant concentration at least 100 times higher than a maximum dopant concentration of an upper subregion of the doped transition region; and creating a doped drift region on top of the upper subregion of the doped transition region, the doped drift region having a lower dopant concentration than the upper subregion of the doped transition region.