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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10529726 B1

PDFFull Text
Date of Patent:
Jan. 07, 2020

Filed:

Aug. 02, 2019

Method of manufacturing memory structure

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Yi-Tsung Tsai, Taichung, TW;

Yu-Chun Yang, Taichung, TW;

Fang-Wei Lin, Taichung, TW;

Hsin-Li Kuo, Taichung, TW;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Ali Naraghi

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/11521 (2017.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 23/31 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/535 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/6656 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 21/0217 (2013.01); H01L 21/31116 (2013.01);
Abstract

A manufacturing method of a memory structure including the following steps is provided. A memory cell structure is formed on a substrate. The memory cell structure has a first side and a second side opposite to each other. A protective layer structure covering the memory cell structure is formed. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.

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