The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Mar. 26, 2015
Applicant:

Intel Deutschland Gmbh, Neubiberg, DE;

Inventors:

Christoph Kutter, Munich, DE;

Ewald Soutschek, Neubiberg, DE;

Georg Meyer-Berg, Munich, DE;

Assignee:

INTEL DEUTSCHLAND GMBH, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 21/683 (2006.01); H01L 23/48 (2006.01); H01L 23/12 (2006.01); H01L 23/50 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 21/6835 (2013.01); H01L 23/12 (2013.01); H01L 23/48 (2013.01); H01L 23/50 (2013.01); H01L 23/5381 (2013.01); H01L 23/5389 (2013.01); H01L 24/06 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 21/568 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/20 (2013.01); H01L 2224/92 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15312 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19015 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19104 (2013.01);
Abstract

A semiconductor device including a semiconductor chip having a first conduction element; a substrate having second and third conduction elements; and external connection elements configured to form an electrical path between the second and third conduction elements via the first conduction element.


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