The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jan. 12, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Siqing Lu, Seongnam-si, KR;
Sang-Hoon Ahn, Goyang-si, KR;
Xinglong Chen, Seongnam-si, KR;
Ki-Hyun Kim, Yongin-si, KR;
Kyu-In Shim, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 21/027 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/0228 (2013.01); H01L 21/0274 (2013.01); H01L 21/02208 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 21/3212 (2013.01); H01L 21/76843 (2013.01);
Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.