The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Nov. 07, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Mitsuhiro Iwano, Miyagi, JP;

Masanori Hosoya, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01); H01L 21/76805 (2013.01); H01L 21/76897 (2013.01); H01L 29/66795 (2013.01);
Abstract

An etching method is provided. A processing target object includes a first region made of silicon oxide and a second region made of silicon nitride. The second region is extended to provide a recess and has a bottom region extended on a bottom of the recess. The first region is configured to cover the second region. In the etching method, a deposit of fluorocarbon is formed on the processing target object, and the first region is etched by irradiating ions of atoms of a rare gas toward the processing target object. Then, on the bottom region, a modified region is formed by supplying hydrogen ions. Subsequently, the deposit of fluorocarbon is formed on the processing target object, and the modified region is etched by irradiating ions of atoms of the rare gas toward the processing target object.


Find Patent Forward Citations

Iwano, Mitsuhiro. (2020). Etching method (U.S. Patent No. 10529583). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10529583

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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