The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jan. 18, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Chuan Teng, Zhubei, TW;
Chun-Yin Tsai, Hsinchu, TW;
Chia-Hua Chu, Zhubei, TW;
Chun-Wen Cheng, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.