The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Oct. 28, 2016
Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;
Yoshihiro Sawada, Kanagawa, JP;
Tsukasa Sugawara, Kanagawa, JP;
TOKYO OHKA KOGYO CO., LTD., Kanagawa, JP;
Abstract
To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane. A purification method for purifying a liquid, which comprises a step in which some or all of the liquid is caused to permeate through a polyimide and/or polyamide imide porous membrane having communicating pores from one side to the other side by means of differential pressure, and wherein the liquid is a silylating agent liquid, a film forming material or a diffusing agent composition that is used for diffusing a dopant into a semiconductor substrate.