The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jul. 01, 2016
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Khalil Najafi, Ann Arbor, MI (US);
Yemin Tang, Ann Arbor, MI (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/00 (2006.01); H04R 17/02 (2006.01); H04R 19/04 (2006.01); B81C 1/00 (2006.01); H04R 31/00 (2006.01); H04R 17/00 (2006.01);
U.S. Cl.
CPC ...
H04R 19/005 (2013.01); B81C 1/00269 (2013.01); H04R 17/02 (2013.01); H04R 19/00 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); H04R 17/00 (2013.01); H04R 2201/003 (2013.01);
Abstract
Techniques are presented for fabricating transducers and other types of microstructures having high aspect ratios. To achieve high aspect ratios, wafers are etched from both sides for example using deep reactive ion etching. The three-dimensional structure is designed to have an overall footprint less than four hundred micrometers with a thickness on the order of 0.5-2 millimeters as compared to conventional planar devices.