The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Mar. 15, 2018
Globalfoundries Inc., Grand Cayman, KY;
Kong Boon Yeap, Cupertino, CA (US);
Yang Liu, Clifton Park, NY (US);
Tian Shen, Clifton Park, NY (US);
Anjum Mehta, Saratoga Springs, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.