The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Mar. 20, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Juntao Li, Cohoes, NY (US);
Xin Miao, Guilderland, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 27/1203 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66439 (2013.01); H01L 29/66553 (2013.01); H01L 29/7842 (2013.01); H01L 29/7843 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01); H01L 21/02274 (2013.01); H01L 29/66545 (2013.01);
Abstract
Methods of forming a semiconductor device include forming stress liners in contact with both ends of a fin of alternating channel material and sacrificial material layers. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack on the suspended layers of channel material.