The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Sep. 12, 2018
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Po-Wen Su, Kaohsiung, TW;
Chih-Wei Lin, Tainan, TW;
Wei-Chih Lai, Kaohsiung, TW;
Tai-Yen Lin, Changhua County, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/0337 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/823437 (2013.01); H01L 27/088 (2013.01);
Abstract
A semiconductor device and a method for fabricating the same are provided. A structure of the semiconductor device includes a substrate having a device region and an edge region. A plurality of device structures is formed on the substrate. An etching stop layer is disposed in the edge region of the substrate. The etching stop layer is converted from P-type dopants from an exposed surface layer of the substrate.