The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Dec. 10, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Han-Chin Chiu, Kaohsiung, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/29 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 23/291 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract
A method includes forming a first III-V compound layer over a substrate; forming a second III-V compound layer over the first III-V compound layer, wherein the first and second III-V compound layers include different materials; forming a first crystalline oxide layer over the second III-V compound layer; and forming a first crystalline interfacial layer over the first crystalline oxide layer.