The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Oct. 30, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chung-Cheng Chou, Hsin-Chu, TW;

Ya-Chen Kao, Fuxing Township, TW;

Tien-Wei Chiang, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/12 (2013.01); H01L 43/10 (2013.01);
Abstract

The present disclosure provides one embodiment of a semiconductor structure that includes a first metal layer formed on a semiconductor substrate, wherein the first metal layer includes a first metal feature in a first region and a second metal feature in a second region; a second metal layer disposed on the first metal layer, wherein the second metal layer includes a third metal feature in the first region and a fourth metal feature in a second region; a magneto-resistive memory device sandwiched between the first metal feature and the third metal feature; and a capacitor sandwiched between the second metal feature and the fourth metal feature.


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