The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Mar. 14, 2018
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Kimihiro Satoh, Fremont, CA (US);

Hongxin Yang, Newark, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H01F 10/3268 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

The present invention is directed to a memory device including a magnetic memory element; a horizontal conductive line disposed above the magnetic memory element; a bottom electrode formed beneath the magnetic memory element and having a top, first and second sides that are opposite to each other; a first vertical conductive line formed adjacent to the first side of the bottom electrode with a first volatile switching layer and a first electrode layer interposed therebetween; and a second vertical conductive line formed adjacent to the second side of the bottom electrode with a second volatile switching layer and a second electrode layer interposed therebetween. The magnetic memory element is electrically connected to the horizontal conductive line at one end and to the bottom electrode at the other end.


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