The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

May. 24, 2019
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Cheng Long Zhang, Shanghai, CN;

Qi Yang He, Shanghai, CN;

Yan Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/0276 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor structure is provided and includes a base substrate including a device region and a peripheral region surrounding the device region, the base substrate including a base interconnection structure formed in each of the device region and the peripheral region; a medium layer on the base substrate; a first interconnection structure through the medium layer and on the base interconnection structure in the device region; and a second interconnection structure through the medium layer and on the base interconnection structure in the peripheral region. The first interconnection structure includes: a first portion over the base interconnection structure, and a second portion partially on the first portion and partially on a portion of the medium layer.


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