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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522418 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Apr. 23, 2018

Semiconductor device and method for manufacturing the same

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-Sheng Yun, Taipei, TW;

You-Ru Lin, New Taipei, TW;

Shao-Ming Yu, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Feifei Yeung Lopez

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 25/065 (2006.01); H01L 21/76 (2006.01); H01L 21/027 (2006.01); B82Y 10/00 (2011.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/822 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); B82Y 10/00 (2013.01); H01L 21/027 (2013.01); H01L 21/02008 (2013.01); H01L 21/02035 (2013.01); H01L 21/02532 (2013.01); H01L 21/02645 (2013.01); H01L 21/76 (2013.01); H01L 21/8221 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 25/0657 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/1054 (2013.01); H01L 29/1079 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7849 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method for manufacturing a semiconductor device is provided. A semiconductor substrate is received. The semiconductor substrate is patterned to form a plurality of protrusions spaced from one another, wherein the protrusion comprises a base section, and a seed section stacked on the base section. A plurality of first insulative structures are formed, covering sidewalls of the base sections and exposing sidewalls of the seed sections. A plurality of spacers are formed, covering the sidewalls of the seed sections. The first insulative structures are partially removed to partially expose the sidewalls of the base sections. The base sections exposed from the first insulative structures are removed. A plurality of second insulative structures are formed under the seed sections.

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