The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jan. 11, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jason E. Stephens, Menands, NY (US);

Daniel Chanemougame, Niskayuna, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Lars W. Liebmann, Mechanicville, NY (US);

Gregory A. Northrop, Ballston Spa, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76802 (2013.01); H01L 21/76885 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 21/7682 (2013.01); H01L 21/76849 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.


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