The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Aug. 21, 2018
National Tsing Hua University, Hsinchu, TW;
Zheng-Yong Liang, Kaohsiung, TW;
Chao-Hui Yeh, Yunlin County, TW;
Jui-Hsiung Liu, Taipei, TW;
Po-Wen Chiu, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
An atomic layer deposition method is provided. The atomic layer deposition method includes the following steps. A substrate is placed in a reaction chamber. At least one deposition cycle is performed to deposit a metal film on the substrate. The at least one deposition cycle includes the following steps. A metal precursor is introduced in the reaction chamber. A hydrogen plasma is introduced to be reacted with the metal precursor adsorbed on the substrate to form the metal film. An annealing process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.