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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522347 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Mar. 07, 2017

Method for manufacturing sputtering target, method for forming oxide film, and transistor

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Masashi Tsubuku, Atsugi, JP;

Masashi Oota, Atsugi, JP;

Yoichi Kurosawa, Atsugi, JP;

Noritaka Ishihara, Koza, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Khanh T Nguyen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/08 (2006.01); C01G 15/00 (2006.01); B82Y 30/00 (2011.01); C23C 14/34 (2006.01); C30B 23/08 (2006.01); C30B 29/22 (2006.01); H01J 37/34 (2006.01); C30B 1/04 (2006.01); C30B 28/02 (2006.01); C30B 29/68 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02631 (2013.01); B82Y 30/00 (2013.01); C01G 15/006 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); C30B 1/04 (2013.01); C30B 23/08 (2013.01); C30B 28/02 (2013.01); C30B 29/22 (2013.01); C30B 29/68 (2013.01); H01J 37/3429 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); C01P 2002/32 (2013.01); C01P 2002/72 (2013.01); C01P 2002/85 (2013.01); C01P 2004/04 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); H01J 2237/081 (2013.01); H01J 2237/3322 (2013.01); H01J 2237/3323 (2013.01);
Abstract

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

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