The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Oct. 07, 2016
Applicant:

Austemper Design Systems Inc., Austin, TX (US);

Inventor:

Sanjay Pillay, Austin, TX (US);

Assignee:

Mentor Graphics Corporation, Wilsonville, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H03K 19/21 (2006.01); H03K 19/00 (2006.01); G11C 29/12 (2006.01); G11C 29/54 (2006.01); G11C 29/52 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12015 (2013.01); G06F 17/5009 (2013.01); G06F 17/5022 (2013.01); G06F 17/5045 (2013.01); G11C 11/412 (2013.01); G11C 29/52 (2013.01); G11C 29/54 (2013.01); H03K 19/0008 (2013.01); H03K 19/21 (2013.01); G06F 2217/70 (2013.01);
Abstract

Low power very large scale integrated (VLSI) designs using a circuit failure in sequential cells as low voltage check for limit of operation of a design are provided. One such method involves the adding a plurality of bits for sequential elements in the design including sets of flip-flops, RAMs, ROMs and register files to add parity or single error correct and double error detect mechanism, a method to detect the parity errors or a single bit error and a double bit error in the sequential elements, starting at a voltage of operation at a nominal value and gradually lowering voltage setting till a first error is detected in the sequential elements, increasing the voltage of operation by predetermined step above a voltage of first fail to achieve an optimal voltage setting of a correct operation of the design, storing this optimal voltage setting in anon-volatile memory for a subsequent use.


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