The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jan. 19, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Karthik Ramanathan, Bangalore, IN;

Kartik Shah, Sunnyvale, CA (US);

Nyi O. Myo, San Jose, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Jeffrey Tobin, Mountain View, CA (US);

Errol Antonio C. Sanchez, Tracy, CA (US);

Palamurali Gajendra, Bangalore, IN;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4583 (2013.01); H01L 21/67115 (2013.01); H01L 21/68735 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.


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