The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Dec. 20, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hideaki Yamasaki, Nirasaki, JP;

Takeshi Itatani, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); H01L 21/673 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4408 (2013.01); C23C 16/4586 (2013.01); H01L 21/67017 (2013.01); H01L 21/67386 (2013.01); H01L 21/67393 (2013.01); H01L 21/68792 (2013.01); H01L 21/67103 (2013.01); H01L 21/68742 (2013.01);
Abstract

A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.


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