The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Apr. 27, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsiang-Wei Lin, New Taipei, TW;

Chung-Chi Ko, Nantou, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 29/42364 (2013.01); H01L 29/512 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a fin structure over a substrate. The semiconductor device structure also includes a gate structure over the fin structure. The semiconductor device structure further includes a source/drain structure adjacent to the gate structure. In addition, the semiconductor device structure includes a first spacer layer between the gate structure and the source/drain structure, wherein the first spacer layer has a protruding portion extending towards the substrate.


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