The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Aug. 24, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Fatma Arzum Simsek-Ege, Boise, ID (US);
Krishna K. Parat, Palo Alto, CA (US);
Luan C. Tran, Meridian, ID (US);
Meng-Wei Kuo, Boise, ID (US);
Yushi Hu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 21/822 (2006.01); H01L 27/11578 (2017.01); H01L 27/11529 (2017.01); H01L 27/1158 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 27/1157 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 21/8221 (2013.01); H01L 27/1158 (2013.01); H01L 27/11529 (2013.01); H01L 27/11578 (2013.01);
Abstract
Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.