The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Dec. 10, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih Wei Lu, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
Chien-Hua Huang, Miaoli County, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Zhao-Cheng Chen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A semiconductor device includes a first conductive structure directly over an isolation structure; a second conductive structure directly over an active region; a first dielectric layer over the first and second conductive structures; a second dielectric layer over the first dielectric layer, wherein the first and second dielectric layers include different materials; a first conductive feature contacting the first conductive structure through at least the first and second dielectric layers; and a second conductive feature contacting the second conductive structure through at least the first and second dielectric layers, wherein the first and second conductive features include a same metal.