The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Oct. 31, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/48 (2006.01); H01L 21/00 (2006.01); H01L 21/4763 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 21/78 (2013.01); H01L 23/5226 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 24/94 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80905 (2013.01);
Abstract
A device includes first and second dies and a seal ring. The first die includes a top dielectric layer. The second die is over the first die. The second die includes a bottom dielectric layer bonded to the top dielectric layer of the first die at an interface between the first die and the second die. The seal ring extends from the first die to the second die through the interface. A portion of the top dielectric layer of the first die and a portion of the bottom dielectric layer of the second die are separated by a gap outside the seal ring.