The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jun. 26, 2018
Lam Research Corporation, Fremont, CA (US);
Nikhil Dole, Union City, CA (US);
Takumi Yanagawa, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM device. The feature is etched in dielectric material, which often includes silicon oxide. The feature is etched using chemistry that includes WF. Although WFis commonly used as a deposition gas (e.g., to deposit tungsten-containing film), it can also be used during etching. Advantageously, the inclusion of WFin the etch chemistry can increase the etch rate of the dielectric material, as well as increase the selectivity of the etch. Unexpectedly, these benefits can be realized without any increase in capping.