The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Dec. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Fu Lee, Hsinchu, TW;

Yu-Der Chih, Hsinchu, TW;

Hon-Jarn Lin, New Taipei, TW;

Yi-Chun Shih, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 7/062 (2013.01); G11C 7/22 (2013.01); G11C 11/161 (2013.01); G11C 13/004 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0057 (2013.01); G11C 2207/063 (2013.01);
Abstract

A device includes memory cells, a first reference switch, a second reference switch, a first reference storage unit, a second reference storage unit, and an average current circuit. The memory cells are each configured to store corresponding bit data. The first reference switch and the second reference switch are turned on when a word line is activated. The first reference storage unit generates a first signal having a first logic state when the first reference switch is turned on. The second reference storage unit generates a second signal having a second logic state when the second reference switch is turned on. The average current circuit averages the first signal and the second signal to generate a reference signal to be compared with a current indicating the bit data of one memory cell, in order to determine a logic state of the bit data of the memory cell.


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