The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Oct. 15, 2018
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Hui-I Wu, Hsinchu County, TW;
Ke-Ying Su, Taipei, TW;
Wan-Ting Lo, Taipei, TW;
Niranjan Vepuri, Hsinchu, TW;
Hsiang-Ho Chang, Miaoli County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
Fabricating a first semiconductor device cell using a first process based on a first process parameter or material comprises extracting semiconductor device parameters from the first process parameters to obtain extracted semiconductor device parameters of a first semiconductor device cell. The fabrication process includes training an artificial intelligence to obtain a predictive artificial intelligence using training data as input, the training data comprising the extracted semiconductor device cell parameters and the first process parameter or material. A proposed process modification is provided to the predictive artificial intelligence to generate a predicted cell delay by the predictive artificial intelligence. The predicted cell delay is evaluated against a cell delay threshold. When the predicted cell delay satisfies the cell delay threshold, a new semiconductor device cell is fabricated using a modified process incorporating the proposed process modification.