The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jan. 05, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Ming Chang, Zhubei, TW;
Ru-Gun Liu, Zhubei, TW;
Shuo-Yen Chou, Ji-an Shiang, TW;
Chien-Wen Lai, Hsinchu, TW;
Zengqin Zhao, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A pattern modification method and a patterning process are provided. The method includes extracting a first pattern and a second pattern to be respectively transferred to a first target portion and a second target portion of a resist layer. The method also includes obtaining regional information of the first target portion and the second target portion. The method includes determining a first desired focus position for transferring the first pattern based on the regional information. In addition, the method includes determining a second desired focus position for transferring the second pattern based on the regional information. The method includes modifying one or both of the first pattern and the second pattern. As a result, focus positions of the first pattern and the second pattern are shifted to be substantially and respectively positioned at the first desired focus position and the second desired focus position during an exposure operation.