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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10514605 B1

PDFFull Text
Date of Patent:
Dec. 24, 2019

Filed:

Jul. 24, 2018

Resist multilayer film-attached substrate and patterning process

Applicants:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Seiichiro Tachibana, Jyoetsu, JP;

Tsutomu Ogihara, Jyoetsu, JP;

Hiroko Nagai, Jyoetsu, JP;

Romain Lallement, Troy, NY (US);

Karen E. Petrillo, Voorheesville, NY (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/32 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); G03F 7/09 (2006.01); C09D 161/00 (2006.01); C08G 16/02 (2006.01); C09D 161/34 (2006.01); C08G 14/04 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); C08G 8/04 (2006.01); C08G 8/22 (2006.01); C09D 161/12 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 8/04 (2013.01); C08G 8/22 (2013.01); C08G 14/04 (2013.01); C08G 16/0237 (2013.01); C09D 161/00 (2013.01); C09D 161/12 (2013.01); C09D 161/34 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/0752 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); G03F 7/423 (2013.01); H01L 21/0206 (2013.01); H01L 21/0214 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0276 (2013.01); H01L 21/02118 (2013.01); H01L 21/0331 (2013.01); H01L 21/0332 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01);
Abstract

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

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