The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jan. 16, 2015
Applicants:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Dow Global Technologies Llc, Midland, MI (US);

Inventors:

Moonsub Shim, Urbana, IL (US);

Nuri Oh, Champaign, IL (US);

You Zhai, Urbana, IL (US);

Sooji Nam, Urbana, IL (US);

Peter Trefonas, III, Medway, MA (US);

Kishori Deshpande, Lake Jackson, TX (US);

Jake Joo, Somerville, MA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 33/06 (2010.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 31/0296 (2006.01); H01L 31/0352 (2006.01); H01L 33/18 (2010.01); H01L 21/02 (2006.01); H01L 51/50 (2006.01); H01L 29/225 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01); H01L 33/50 (2010.01); H01L 51/00 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0256 (2013.01); H01L 21/02557 (2013.01); H01L 21/02601 (2013.01); H01L 21/02603 (2013.01); H01L 21/02606 (2013.01); H01L 21/02628 (2013.01); H01L 29/068 (2013.01); H01L 29/0669 (2013.01); H01L 29/125 (2013.01); H01L 29/127 (2013.01); H01L 29/225 (2013.01); H01L 31/0296 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01); H01L 31/1828 (2013.01); H01L 33/0083 (2013.01); H01L 33/18 (2013.01); H01L 33/28 (2013.01); H01L 51/502 (2013.01); B82Y 20/00 (2013.01); H01L 33/502 (2013.01); H01L 51/0037 (2013.01); H01L 51/0042 (2013.01); H01L 51/5072 (2013.01); H01L 2251/5369 (2013.01); Y10S 977/762 (2013.01); Y10S 977/825 (2013.01); Y10S 977/949 (2013.01);
Abstract

Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.


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