The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jan. 15, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ming-Ta Hsieh, Zhubei, TW;
Tetsu Ohtou, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); B82Y 10/00 (2011.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/775 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0676 (2013.01); H01L 29/0692 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01);
Abstract
A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized.