The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Apr. 13, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first conductive wiring, at least one first dielectric layer, at least one second dielectric layer and a second conductive wiring. The at least one first dielectric layer is over the first conductive wiring. The at least one second dielectric layer is over the at least one first dielectric layer. The second conductive wiring is over the at least one second dielectric layer. The dielectric constant of the at least one second dielectric layer is higher than the dielectric constant of the at least one first dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile