The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Aug. 08, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hui Zang, Guilderland, NY (US);
Ruilong Xie, Schenectady, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Garo J. Derderian, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/823481 (2013.01); H01L 28/24 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A resistor for an integrated circuit (IC), an IC and a related method are disclosed. The resistor may include a metal alloy resistor body positioned within a single diffusion break (SDB). The SDB provides an isolation region in a semiconductor fin between a pair of fin-type field effect transistors (finFETs). The resistor in the SDB allows for the resistor to be built at front-end-of-line (FEOL) layers, which saves on space and expense, and allows for precise dimensions for the resistor.