The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Feb. 05, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Somnath Ghosh, Clifton Park, NY (US);

Eswar Ramanathan, Mechanicville, NY (US);

Qanit Takmeel, Latham, NY (US);

Ming He, San Jose, CA (US);

Jeric Sarad, Mechanicville, NY (US);

Ashwini Chandrashekar, Clifton Park, NY (US);

Colin Bombardier, Clifton Park, NY (US);

Anbu Selvam KM Mahalingam, Mechanicville, NY (US);

Keith P. Donegan, Saratoga Springs, NY (US);

Prakash Periasamy, Fremont, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/544 (2006.01); G01N 21/552 (2014.01); G01B 11/27 (2006.01); H01L 21/68 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G01B 11/272 (2013.01); G01N 21/553 (2013.01); H01L 21/681 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01);
Abstract

Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.


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