The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Sep. 18, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ying-Hsueh Chang Chien, Hsin-chu, TW;
Yu-Ming Lee, New Taipei, TW;
Man-Kit Leung, Taipei, TW;
Chi-Ming Yang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76841 (2013.01); H01L 21/76844 (2013.01); H01L 21/76867 (2013.01); H01L 23/5329 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01); Y02P 80/30 (2015.11);
Abstract
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.