The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Dec. 15, 2017
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Mehul D. Shroff, Austin, TX (US);
Douglas Michael Reber, Austin, TX (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/6659 (2013.01); H01L 29/785 (2013.01); H01L 29/7833 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of making a semiconductor device with an air gap for a terminal of a semiconductor device includes forming a sacrificial sidewall spacer and removing the spacer after the formation of contact structures for the semiconductor device. The air gap is located in portions of the wafer where the sacrificial air gap was removed. Since the contacts are formed prior to the removal of the sacrificial spacers, air gaps can advantageously be formed without electrically conductive contact material undesirably being deposited in locations of the desired air gap.