The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Apr. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Chia-Ying Li, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); C23C 14/48 (2006.01); C23C 16/455 (2006.01); C23C 16/48 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); C23C 14/48 (2013.01); C23C 16/45525 (2013.01); C23C 16/483 (2013.01); C23C 16/50 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/02296 (2013.01);
Abstract

Representative systems and methods for preventing or otherwise reducing extreme-ultraviolet-induced material property changes (e.g., layer thickness shrinkage) include one or more thermal treatments to at least partially stabilize a material forming a material layer disposed over a substrate prior to extreme ultraviolet (EUV) exposure (e.g., wavelengths spanning about 124 nm to about 10 nm) attendant to photolithographic processing. Representative systems and methods provide for reduction of average compressive stress in a material layer after thermal treatment prior to extreme EUV photolithographic patterning. Representative thermal treatments may include one or more annealing processes, ultraviolet (UV) radiation treatments, ion implantations, ion bombardments, plasma treatments, surface baking treatments, surface coating treatments, surface ashing treatments, or pulsed laser treatments.


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