The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Mar. 12, 2018
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Assignee:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G01N 21/47 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70625 (2013.01); G01N 21/4788 (2013.01); G01N 21/9501 (2013.01); G03F 7/70508 (2013.01); G03F 7/70633 (2013.01); G01N 2021/4735 (2013.01); G01N 2021/4792 (2013.01);
Abstract
In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.