The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

May. 09, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Lee Brogan, Newberg, OR (US);

Steven T. Mayer, Aurora, OR (US);

Matthew Thorum, Tigard, OR (US);

Joseph Richardson, Sherwood, OR (US);

David W. Porter, Sherwood, OR (US);

Haiying Fu, Camas, WA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 21/14 (2006.01); C25D 21/12 (2006.01); B41C 1/18 (2006.01); G01N 27/26 (2006.01); G01N 27/413 (2006.01); G01N 27/416 (2006.01); H05K 3/24 (2006.01);
U.S. Cl.
CPC ...
C25D 21/14 (2013.01); B41C 1/18 (2013.01); C25D 21/12 (2013.01); G01N 27/26 (2013.01); G01N 27/413 (2013.01); G01N 27/416 (2013.01); H05K 3/241 (2013.01);
Abstract

The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the substrate during the fill process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feature.


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