The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Oct. 08, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ming-Ta Lei, Hsin-Chu, TW;

Chia-Hua Chu, Hsinchu County, TW;

Hsin-Chih Chiang, Hsinchu, TW;

Tung-Tsun Chen, Hsinchu, TW;

Chun-Wen Cheng, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
C23F 4/00 (2013.01);
Abstract

Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.


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