The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Apr. 16, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yao-Wen Chang, Taipei, TW;
Tsung-Hsueh Yang, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present application relates to a method for forming a top-electrode cap structure on a memory cell. In some embodiments, a method for forming a top-electrode cap structure on a memory cell. The method includes providing a memory cell comprising a top electrode, a bottom electrode, and a resistive memory element sandwiched between the top and bottom electrodes. An etch is performed into an interlayer dielectric (ILD) layer covering the memory cell to form a via opening exposing the top electrode of the memory cell. A getter layer is then formed to line the via opening, and further, over and abutting the top electrode of the memory cell. An oxygen-resistant layer is formed over and abutting the getter layer.