The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Dec. 19, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Shih-Yen Lin, Hsinchu, TW;
Chi-Wen Liu, Hsinchu, TW;
Chong-Rong Wu, New Taipei, TW;
Xiang-Rui Chang, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Abstract
A semiconductor device includes a first film disposed over a semiconductor substrate, the first film comprising a first transition metal dichalcogenide; a second film disposed over the first film, the second film comprising a second transition metal dichalcogenide different from the first transition metal dichalcogenide; source and drain features formed over the second film; a first gate stack formed over the second film and interposed between the source and drain features; and a second gate stack formed over the semiconductor substrate opposite from the first gate stack such that the semiconductor substrate is between the first and second gate stacks.